![]() ![]() ► A metal-oxide TFT technology platform for flexible RF communication systems (10by10.► Wireless Indium-Gallium-Zink-Oxide TranSmitters and Devices On Mechanically-Flexible Thin-Film Substrates (W I S D O M II).Similar in structure to MOSFET it differs in. ► RF Transceiver Functionalities from Aggressively Scaled Metal Oxide TOLAE Technologies Types of Transistors: Tunnel Field-Effect transistor: This type of transistor is mainly used for experiments.► Flexible analogue and digital circuit blocks in amorphous metal oxides.► High-speed flexible transistors and tunnel diodes and circuits based on them.► Scalable MoS2 based flexible devices and circuits for wireless communications.► Associated non-FFlexCom Project: Magnetic field tunable flexible wireless communication device.► Flexible high-speed thin-film transistors and circuits based on large-area grown two-dimensional transition metal dichalcogenides.► Solution-Processed, Air-stable, and High-Cutoff Frequency Organic Transistors for Wireless Communication Systems.► Megahertz Organic Thin-Film Transistors for Flexible Biomedical Systems.► FlexARTwo – Flexible Active Radar Backscatter Tag in Organic Electronics Focused on the theme of TFT, this paper will first introduce the basic working principle and structure of general MOSFET, and then illustrate corresponding.► Simulation tools for high frequency flexible electronic devices.► High-frequency modeling and characterization of printed organic crystalline transistors.The entire wireless system will be integrated on a flexible polymeric substrate. The design of analog and mixed-signal circuits, including frequency mixers, analog filters, voltage stabilization circuits, electrical references and neural stimulators, will be supported by the development of optimized DC and AC device models. By taking advantage of high-resolution stencil masks for the device fabrication, TFTs with channel lengths well below 1 µm can be manufactured. ![]() The results of these simulations will be used to optimize all critical aspects of the TFT fabrication process, such as channel length, gate overlap, semiconductor thickness and contact doping, with the goal of increasing the cutoff frequencies of both p-channel and n-channel organic TFTs fabricated on plastic substrates beyond 1 MHz. For this purpose, the factors that currently limit the cutoff frequencies of flexible low-voltage organic TFTs with channel lengths of 1 µm to about 1 MHz for p-channel TFTs and 100 kHz for n-channel TFTs will be investigated by numerical simulations. A special focus is on neural interfaces, such as cochlea implants. The goals of this project are the optimization of organic thin-film transistors (TFTs) and the advancement of organic-TFT-based analog and mixed-signal circuit design to enable the realization of low-power biomedical systems on flexible polymeric substrates. Global Thin Film Transistor (TFT) Market by Type (Organic, Inorganic), By Application (Televisions, Laptops, Smartphones & Tablets, Wearable Devices, Others). Max-Planck-Institut für Festkörperforschung (MPI-FKF)įachbereich 02 – Elektro- und Informationstechnik Professor Dr.-Ing. ![]()
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